JPS6245710B2 - - Google Patents
Info
- Publication number
- JPS6245710B2 JPS6245710B2 JP54082395A JP8239579A JPS6245710B2 JP S6245710 B2 JPS6245710 B2 JP S6245710B2 JP 54082395 A JP54082395 A JP 54082395A JP 8239579 A JP8239579 A JP 8239579A JP S6245710 B2 JPS6245710 B2 JP S6245710B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resistance
- low
- electrode
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/343—Gate regions of field-effect devices having PN junction gates
Landscapes
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8239579A JPS566471A (en) | 1979-06-28 | 1979-06-28 | Field effect type thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8239579A JPS566471A (en) | 1979-06-28 | 1979-06-28 | Field effect type thyristor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS566471A JPS566471A (en) | 1981-01-23 |
JPS6245710B2 true JPS6245710B2 (en]) | 1987-09-28 |
Family
ID=13773390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8239579A Granted JPS566471A (en) | 1979-06-28 | 1979-06-28 | Field effect type thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS566471A (en]) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2501913A1 (fr) * | 1981-03-10 | 1982-09-17 | Thomson Csf | Transistor a effet de champ de type planar comportant des electrodes a puits metallises et procede de fabrication de ce transistor |
US4546375A (en) * | 1982-06-24 | 1985-10-08 | Rca Corporation | Vertical IGFET with internal gate and method for making same |
JPS6077463A (ja) * | 1983-10-05 | 1985-05-02 | Toyo Electric Mfg Co Ltd | 静電誘導サイリスタ及びその製造方法 |
US4654679A (en) * | 1983-10-05 | 1987-03-31 | Toyo Denki Seizo Kabushiki Kaisha | Static induction thyristor with stepped-doping gate region |
JPS6384066A (ja) * | 1986-09-26 | 1988-04-14 | Semiconductor Res Found | 集積化光トリガ・光クエンチ静電誘導サイリスタ及びその製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5619749A (en) * | 1979-07-26 | 1981-02-24 | Toto Ltd | Building blank |
JPS6132828A (ja) * | 1984-07-25 | 1986-02-15 | Konishiroku Photo Ind Co Ltd | 二焦点式カメラ |
-
1979
- 1979-06-28 JP JP8239579A patent/JPS566471A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS566471A (en) | 1981-01-23 |
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